PHD11N06LT データシート PDFこの部品の機能は「Trenchmos Transistor LogIC Level Fet」です。 |
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部品番号 |
PHD11N06LT TrenchMOS transistor Logic level FET Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state cha NXP Semiconductors |
PHD11N06LT N-channel TrenchMOS transistor Logic level FET NXP Semiconductors |
文字列「 PHD11N06 」「 11N06LT 」で始まる検索結果です。 |
部品説明 |
1106A Diode ( Rectifier ) American Microsemiconductor |
1106B (1102xB - 1110xB) Single Phase Bridge 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102B - 1110B 1102FB - 1110FB 1102UFB - 1110UFB ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) Average Rectified Curre VMI |
1106B Diode ( Rectifier ) American Microsemiconductor |
1106C (1102xC - 1110xC) Single Phase Bridge 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102C - 1110C 1102FC - 1110FC 1102UFC - 1110UFC ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) Average Rectified Curre VMI |
1106C Diode ( Rectifier ) American Microsemiconductor |
1106D (1102xD - 1110xD) Single Phase Bridge 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102D - 1110D 1102FD - 1110FD 1102UFD - 1110UFD ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) Average Rectified Curre VMI |
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