Datasheet PHB60N06LT Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	PHB60N06LT	TrenchMOS transistor Logic level FET Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP60N06LT, PHB60N06LT	NXP Semiconductors	transistor

PHB Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	PHB100N03LT	N-channel enhancement mode field-effect transistor PHB100N03LT N-channel enhancement mode ﬁeld-effect transistor Rev. 01 — 07 September 2000 M3D166 Product speciﬁcation 1. Description N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHB100N03LT in SOT404 (D2-PAK).	NXP Semiconductors	transistor
2	PHB101NQ03LT	TrenchMOS logic level FET PHB/PHD101NQ03LT TrenchMOS™ logic level FET Rev. 02 — 25 February 2003 Product data 1. Description N-channel logic level ﬁeld-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHB101NQ03LT in SOT404 (D2-PAK) PHD101NQ03LT in SOT428 (D-PAK). 2. F	NXP Semiconductors	data
3	PHB101NQ04T	N-channel TrenchMOS standard level FET PHP/PHB101NQ04T N-channel TrenchMOS™ standard level FET Rev. 01 — 12 May 2004 Product data 1. Product proﬁle 1.1 Description N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Standard level thresh	NXP Semiconductors	data
4	PHB108NQ03LT	TrenchMOS logic level FET PHP/PHB/PHD108NQ03LT TrenchMOS™ logic level FET Rev. 02 — 11 September 2002 Product data 1. Product proﬁle 1.1 Description N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP108NQ03LT in SOT78 (TO-220AB) PHB108NQ03L	NXP Semiconductors	data
5	PHB10N40	PowerMOS transistor Philips Semiconductors Product specification PowerMOS transistor PHB10N40 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high	NXP Semiconductors	transistor
6	PHB110NQ06LT	N-channel TrenchMOS logic level FET PHP/PHB110NQ06LT N-channel TrenchMOS™ logic level FET Rev. 01 — 04 May 2004 Product data 1. Product proﬁle 1.1 Description Logic level N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level thres	NXP Semiconductors	data
7	PHB110NQ08LT	N-channel TrenchMOS logic level FET PHP/PHB110NQ08LT N-channel TrenchMOS™ logic level FET Rev. 01 — 29 March 2004 Product data 1. Product proﬁle 1.1 Description Logic level N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level thr	NXP Semiconductors	data

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Número de pieza	Descripción	Fabricantes	PDF
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