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Datasheet PHB50N06 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | PHB50N06 | TrenchMOS transistor Standard level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-sta |
 NXP Semiconductors |
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| 4 | PHB50N06 | TrenchMOS transistor Logic level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-sta |
NXP Semiconductors |
|
| 3 | PHB50N06LT | TrenchMOS transistor Logic level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state res |
NXP Semiconductors |
|
| 2 | PHB50N06LT | TrenchMOS transistor Logic level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state res |
NXP Semiconductors |
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