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Datasheet PHB2N50 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | PHB2N50 | PowerMOS transistor Philips Semiconductors
Product specification
PowerMOS transistor
PHB2N50
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switching a |
 NXP Semiconductors |
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| 1 | PHB2N50E | PowerMOS transistors Avalanche energy rated Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
PHP2N50E, PHB2N50E, PHD2N50E
SYMBOL
d
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NXP Semiconductors |
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