PHB29N08T データシート PDFこの部品の機能は「Trenchmos Standard Level Fet」です。 |
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部品番号 |
PHB29N08T TrenchMOS standard level FET www.Datasheet.jp PHP/PHB29N08T TrenchMOS™ standard level FET Rev. 01 — 29 May 2002 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package usi NXP Semiconductors |
文字列「 PHB29N08 」「 29N08T 」で始まる検索結果です。 |
部品説明 |
2908T UPC2908T DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2900 Series THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR The µPC2900 series of low dropout voltage three terminal positive regulators is constructed with PNP output transistor. The µPC2900 series feature the ability to source NEC |
2SC2908 POWER TRANSISTORS(5.0A/100V/50W) A A A Mospec Semiconductor |
2SC2908 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2908 DESCRIPTION ·With TO-3PN package ·Low collector saturation voltage APPLICATIONS ·For use in power amplifier and switching circuits applications PINNING PIN 1 2 3 Base Col SavantIC |
2SD2908 Transistor m o .c U Plastic-Encapsulate Transistors SOT-89 4 t e e h S TRANSISTOR (NPN) SOT-89 2SD2908 a t a 1. D FEATURES . w dissipation Power 2. w 1 P : 0.5 W (Tamb=25℃) w 2 BASE COLLECTOR CM JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Collector current 5 A ICM: Collector-base Jiangsu Changjiang Electronics |
2SD2908 Low VCE(sat) transistor Actions Semiconductor Co., Ltd. 5-Function Remote Controller TX2C ATS302T/RX2C ATS302R 珠海炬力集成电路设计有限公司 Actions Semiconductor Co., Ltd. TX2C ATS302T/RX2C ATS302R Data Sheet Version 1.02 Shenzhen Office: Tel: 86-755-82211737 Fax: 86-755-82211771 Hong Galaxy Microelectronics |
2SD2908 NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SD2908 2SD2908 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: 5 A Collector-base voltage OV(BR)CBO: 50 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3 WEJ |
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