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Datasheet PHB10N40 Equivalent ( PDF )

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1 PHB10N40   PowerMOS transistor

Philips Semiconductors Product specification PowerMOS transistor PHB10N40 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high
NXP Semiconductors
NXP Semiconductors		 datasheet PHB10N40 pdf

PHB10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
PHB108NQ03LT

TrenchMOS logic level FET

PHP/PHB/PHD108NQ03LT TrenchMOS™ logic level FET Rev. 02 — 11 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP108NQ03LT in SOT78 (T
 NXP Semiconductors
NXP Semiconductors		 datasheet pdf - NXP Semiconductors
PHB100N03LT

N-channel enhancement mode field-effect transistor

PHB100N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 07 September 2000 M3D166 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHB100N03LT
NXP Semiconductors
NXP Semiconductors		 datasheet pdf - NXP Semiconductors
PHB101NQ04T

N-channel TrenchMOS standard level FET

PHP/PHB101NQ04T N-channel TrenchMOS™ standard level FET Rev. 01 — 12 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s S
 NXP Semiconductors
NXP Semiconductors		 datasheet pdf - NXP Semiconductors


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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