PHA2729-300M データシート PDFこの部品の機能は「Radar Pulsed Power Module」です。 |
検索結果を表示する |
部品番号 |
PHA2729-300M Radar Pulsed Power Transistor PHA2729-300M Radar Pulsed Power Module 300W, 2.7-2.9 GHz, 100μs Pulse, 10%Duty Features Outline Drawing • Includes RC bias circuit • In-Phase combined pulsed power transistors • Input and o MA-COM |
PHA2729-300M Radar Pulsed Power Module Radar Pulsed Power Module, 300 Watts, 2.7-2.9 GHz, 100 µS Pulse, 10% Duty www.Datasheet.jp 05/15/01 Preliminary PHA2729-300M Features n n n n n n Outline Drawing Includes RC bias circuit In- Tyco Electronics |
文字列「 PHA2729300 」「 2729 」で始まる検索結果です。 |
部品説明 |
2729-125 Radar 2729-125 125 Watts, 36 Volts, 100µs, 10% Radar 2700-2900 MHz GENERAL DESCRIPTION The 2729-125 is an internally matched, COMMON BASE bipolar transistor capable of providing 125 Watts of pulsed RF output power at 100µs pulse width, 10% duty factor across the 2700 to 2900 MHz ban Advanced Power Technology |
2729-170 Radar 2729-170R2 2729-170 170 Watts, 38 Volts, 100µs, 10% Radar 2700-2900 MHz GENERAL DESCRIPTION The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100µs pulse width, 10% duty factor across the 2700 to Advanced Power Technology |
2729-170 Radar 2729-170R4 2729-170 170 Watts, 38 Volts, 100µs, 10% Radar 2700-2900 MHz GENERAL DESCRIPTION The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100µs pulse width, 10% duty factor across the 2700 to Microsemi Corporation |
2SK2729 Silicon N Channel MOS FET High Speed Power Switching 2SK2729 Silicon N Channel MOS FET High Speed Power Switching ADE-208-455 A 2nd. Edition Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2729 Absolute Ma Hitachi Semiconductor |
AM2729-110 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS AM2729-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 105 W MIN. WITH 6.5 dB G STMicroelectronics |
AM2729-125 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS STMicroelectronics |
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