PH3135-25S データシート PDFこの部品の機能は「Radar Pulsed Power Transistor」です。 |
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部品番号 |
PH3135-25S Radar Pulsed Power Transistor PH3135-25S Radar Pulsed Power Transistor 25W, 3.1-3.5 GHz, 2µs Pulse, 10% Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • H MA-COM |
PH3135-25S Radar Pulsed Power Transistor/25W/2ms Pulse/10% Duty 3.1-3.5GHz Tyco Electronics |
文字列「 PH313525 」「 3135 」で始まる検索結果です。 |
部品説明 |
2N3135 Small Signal Transistors Small Signal Transistors TO-18 Case (Continued) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V) MIN MIN MIN MAX *ICES **ICEV hFE @ IC @ VCE VCE (SAT) @ IC Cob fT NF ton (mA) (V) (V) (mA) (pF) (MHz) (dB) (ns) MIN MAX MAX MAX MIN MAX MAX toff (ns) MA Central Semiconductor |
2SC3135 PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:ENN1049E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features · High VEBO. · Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2033A [2SA1253/2SC3135] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0 Sanyo Semicon Device |
2SK3135 Silicon N Channel MOS FET High Speed Power Switching 2SK3135(L),2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 2 1 1 2 Hitachi Semiconductor |
2SK3135L Silicon N Channel MOS FET High Speed Power Switching 2SK3135(L),2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 2 1 1 2 Hitachi Semiconductor |
2SK3135S Silicon N Channel MOS FET High Speed Power Switching 2SK3135(L),2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 2 1 1 2 Hitachi Semiconductor |
3135GN-280LV S-Band Radar 3135GN-280LV 280 Watts • 50 Volts • 200 s, 20% S-Band Radar 3100 - 3500 MHz GENERAL DESCRIPTION The 3135GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 13 dB gain, 280 Watts of pulsed RF output power at 200 Microsemi |
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