PH3134-65M データシート PDFこの部品の機能は「Radar Pulsed Power Transistor」です。 |
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部品番号 |
PH3134-65M Radar Pulsed Power Transistor PH3134-65M Radar Pulsed Power Transistor 65W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation � MA-COM |
PH3134-65M Radar Pulsed Power Transistor/ 65W/ 1OOms Pulse/ 10% Duty 3.1 - 3.4 GHz ,-=r=-= ---== ZY * = .-----r f = anAMPcompany Radar Pulsed Power Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 (16.51)- NPN Silicon Microwave Power Tyco Electronics |
文字列「 PH313465 」「 3134 」で始まる検索結果です。 |
部品説明 |
2N3134 Small Signal Transistors Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4. Central Semiconductor |
2N3134 Small Signal Transistors Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5.0 5.0 5.0 Central |
2N3134 Trans GP BJT NPN 35V 3-Pin TO-18 Box New Jersey Semiconductor |
2SC3134 For AF Applications Ordering number:EN1048B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 F for AF Applications Features · High VEBO. · Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2018A [2SA1252/2SC3134] C : Collector B : Base E : Emitter ( ) : 2S Sanyo Semicon Device |
2SC3134 NPN Epitaxial Planar Silicon Transistor SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC3134 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Wide ASO and high durability against breakdown. 0.55 High VEBO. +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 + Kexin |
2SK3134 Silicon N Channel MOS FET High Speed Power Switching 2SK3134(L), 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-721B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 Hitachi Semiconductor |
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