PH1214-8M データシート PDFこの部品の機能は「Radar Pulsed Power Transistor/ Sw/ Loops Pulse/ 10% Duty 1.2 - 1.4 Ghz」です。 |
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部品番号 |
PH1214-8M Radar Pulsed Power Transistor/ SW/ loops Pulse/ 10% Duty 1.2 - 1.4 GHz * =s==-z-s .-- z = -----= = x5 r = an AMP company v2.00 Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-8M Features NPN Silicon Microwave Power Transistor Common Base Tyco Electronics |
文字列「 PH12148 」「 1214 」で始まる検索結果です。 |
部品説明 |
1214GN-400LV Broad Band 1214GN-400LV 400 Watts - 50 Volts, 4.5ms, 30% Broad Band 1200 - 1400 MHz GENERAL DESCRIPTION The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms pulse widt Microsemi |
1S1214 Diode (spec sheet) American Microsemiconductor |
2SA1214 Silicon PNP Power Transistor INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1214 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Desinged for low frequency power amplifier app Inchange Semiconductor |
2SA1214 Trans GP BJT PNP 160V 15A 3-Pin MT-200 New Jersey Semiconductor |
2SB1214 PNP Epitaxial Planar Silicon Transistor Ordering number:EN2352A PNP Epitaxial Planar Silicon Transistor 2SB1214 Driver Applications Applications · Motor drivers, hammer drivers, relay drivers. Features · High DC current gain. · Darlington connection. · Small and slim package permitting the 2SB1214- applied sets t Sanyo Semicon Device |
2SC1214 Silicon NPN Epitaxial Low frequency amplifier To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003 Hitachi Semiconductor |
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