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PF610BL データシート PDF 検索 |
番号 | 部品番号 | 部品説明 | メーカ | |
1 | PF610BL | N-Channel Enhancement Mode MOSFET PF610BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 0.7Ω @VGS = 10V ID 0.9A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST |
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PF61 データシート - 検索結果 |
部品番号 | 部品説明 | メーカ | |
PF610BC | N-Channel Enhancement Mode MOSFET PF610BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 0.7Ω @VGS = 10V ID 1.1A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage V |
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PF610HV | Dual N-Channel Enhancement Mode MOSFET PF610HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 0.7Ω @VGS = 10V ID 1A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage |
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PF610BL | N-Channel Enhancement Mode MOSFET PF610BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 0.7Ω @VGS = 10V ID 0.9A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Cur |
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