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Datasheet PF08109B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | PF08109B | MOS FET Power Amplifier Module PF08109B
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone
ADE-208-821B (Z) 3rd Edition Mar. 2000 Application
• Dual band Amplifier for E-GSM (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz) • For 3.5 V nominal battery use
Features
• • • • • 2 in / 2 out dual |
 Hitachi |
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| 1 | PF08109B-TB | Micro Module Specifications |
 Samsung Electronics |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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