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Datasheet PF01410 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | PF01410 | MOS FET Power Amplifier Module for GSM Handy Phone PF01410A
MOS FET Power Amplifier Module for GSM Handy Phone
ADE-208-424B (Z) Product Preview 3rd. Edition November 1997 Application
• For GSM class4 890 to 915 MHz
Features
• • • • 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec
P |
Hitachi Semiconductor |
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1 | PF01410A | MOS FET Power Amplifier Module for GSM Handy Phone PF01410A
MOS FET Power Amplifier Module for GSM Handy Phone
ADE-208-424B (Z) Product Preview 3rd. Edition November 1997 Application
• For GSM class4 890 to 915 MHz
Features
• • • • 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec
P |
Hitachi Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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