www.Datasheet.jp STP7NB60 STP7NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP7NB60 STP7NB60F P s s s s s V DSS 600 V 600 V R DS(on) < 1.2 Ω < 1.2 Ω ID 7.2 A 4.1 A TYPICAL

FQP7N80C/FQPF7N80C QFET FQP7N80C/FQPF7N80C 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailore

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® STP7NB80 STP7NB80FP N - CHANNEL 800V - 1.2Ω - 6.5A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE ST P7NB80 ST P7NB80FP s s s s s V DSS 800 V 800 V R DS(on) < 1.5 Ω < 1.5 Ω ID 6.5 A 6.5 A TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 10

STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) max ID Pw STF7NK30Z t(s)STP7NK30Z STD7NK30Z 300 V 300 V 300 V < 0.9 Ω < 0.9 Ω < 0.9 Ω 5 A 20 W 5 A 50 W 5 A 5

N-CHANNEL 400V-0.85Ω-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP7NK40Z STP7NK40ZFP STD7NK40Z STD7NK40Z-1 s s s s s s STP7NK40Z - STP7NK40ZFP STD7NK40Z - STD7NK40Z-1 VDSS 400 400 400 400 V V V V RDS(on) <1Ω <1Ω <1Ω <1Ω ID 5.4 A 5.

STP7NA60 STP7NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST P 7NA 60 ST P 7NA 60 F I VDSS 600 V 600 V R DS( on) <1Ω <1Ω ID 7.2 A 4.4 A s TYPICAL RDS(on) = 0.92 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCH