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Datasheet P6NA60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | P6NA60 | STP6NA60
STP6NA60 STP6NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP6NA60 STP6NA60FI
s s s s s s s
VDSS 600 V 600 V
R DS(on) < 1.2 Ω < 1.2 Ω
ID 6.5 A 3.9 A
TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALA |  STMicroelectronics | data |
| 2 | P6NA60FI | STP6NA60FI
STP6NA60 STP6NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP6NA60 STP6NA60FI
s s s s s s s
V DSS 600 V 600 V
R DS( on) < 1.2 Ω < 1.2 Ω
ID 6.5 A 3.9 A
TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVAL |  ST Microelectronics | data |
| 3 | P6NA60FP | STP6NA60FP
STP6NA60FP
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STP6NA60F P
s s s s s s s
V DSS 600 V
R DS(on) < 1.2 Ω
ID 3.9 A
TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW | STMicroelectronics | data |
P6N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P6N25 | STP6N25 www.DataSheet.co.kr
STP6N25 STP6N25FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
PRELIMINARY DATA TYPE STP6N25 STP6N25FI
s s s s s
V DSS 250 V 250 V
R DS( on) < 1Ω < 1Ω
ID 6A 4A
TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT ST Microelectronics data | | |
| 2 | P6N60 | FQP6N60 DataSheet.in
FQP6N60
April 2000
QFET
FQP6N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on  Fairchild Semiconductor data | | |
| 3 | P6N60FI | STP6N60FI ( )
STP6N60FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STP6N60FI
s s s s s
VDSS 600 V
R DS(on) < 1.2 Ω
ID 3.8 A
TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLI ST Microelectronics data | | |
| 4 | P6N70 | FQP6N70
QFET
$ $ $ $ $ $ % &'())*+,- .Ω/*,-)* 0 1 2)
3 01 -.3
-))4 !
5
!!6 "
Fairchild Semiconductor data | | |
| 5 | P6N70A | SSP6N70A Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.)
1 2 3
SSP6N70A
BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A Fairchild Semiconductor data | | |
| 6 | P6N80 | FQP6N80 FQP6N80
September 2000
QFET
FQP6N80
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state res Fairchild Semiconductor data | | |
| 7 | P6NA60 | STP6NA60
STP6NA60 STP6NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP6NA60 STP6NA60FI
s s s s s s s
VDSS 600 V 600 V
R DS(on) < 1.2 Ω < 1.2 Ω
ID 6.5 A 3.9 A
TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALA STMicroelectronics data | |
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