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データシート P60N03LDG PDF ( Circuit Data ) |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | P60N03LDG | N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P60N03LDG TO-252 (DPAK) Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 25 12.8m ID 60A D G 1. GATE 2. DRAIN 3. SOURCE S A |
 NIKO-SEM |
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P60 データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| P600B-002 | Diode 50V 6A 2-Pin Case P-6 |
 New Jersey Semiconductor |
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| P600A6A05 | SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 6.0 Amperes) 6A05-6A10 MECHANICAL DATA * * * * * * Case: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: MIL-STD-202E, Method 208 guaranteed Polarity: Color band denotes cathode end Mounting position: Any Weight: 2.08 grams SILICON RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURREN |
 Wing Shing Computer Components |
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| P600B | Diode 50V 6A 2-Pin Case P-6 |
New Jersey Semiconductor |
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| P6006BI | N-Channel Field Effect Transistor NIKO-SEM N-Channel Enhancement Mode P6006BI Field Effect Transistor TO-251 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 65mΩ ID 18A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source |
NIKO-SEM |
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| P600M | TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER DC COMPONENTS CO., LTD. R 6A05/P600A THRU 6A10/P600M RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 6.0 Amperes FEATURES * * * * * Low cost Low leakage Low forward voltage drop High current capability High surge |
 Dc Components |
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| P600K | PLASTIC SILICON RECTIFIERS |
 Semtech Corporation |
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