STP5NK80Z STP5NK80ZFP N-channel 800V - 1.9Ω - 4.3A - TO-220/TO-220FP Zener-protected SuperMESH™ Power MOSFET General features www.Datasheet.jp Type VDSS (@Tjmax) 800 V 800 V RDS(on) < 2.4 �

P5N50C ® Pb Free Plating Product P5N50C 5 Ampere 500 Volt N-Channel MOSFET { ̻ Pb Features ̰ ̰ ̰ ̰ ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V Gate Charge (Typical 18.5nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested ඔ 2. Drain BVDSS = 500V ̵ 1. Gate {

STP5NA60 STP5NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA60 STP5NA60FI s s s s s s s V DSS 600 V 600 V R DS( on) < 1.6 Ω < 1.6 Ω ID 5.3 A 3.4 A TYPICAL RDS(on) = 1.35 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AV

Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTA 5N50P IXTP 5N50P IXTY 5N50P VDSS = 500 V = 4.8 A ID25 RDS(on) ≤ 1.4 Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25

STP5NC90Z - STP5NC90ZFP STB5NC90Z - STB5NC90Z-1 N-CHANNEL 900V - 2.1Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP5NC90Z/FP STB5NC90Z/-1 s s VDSS 900V 900V RDS(on) < 2.5Ω < 2.5Ω ID 4.6 A 4.6 A 1 3 s s s TYPICAL RDS(

STP5NK90Z STF5NK90Z N-CHANNEL 900V - 2Ω - 4.5A TO-220/TO-220FP Zener-Protected SuperMESH™MOSFET Table 1: General Features TYPE STP5NK90Z STF5NK90Z s Figure 1: Package ID 4.5 A 4.5 A (*) Pw 125 W 30 W VDSS 900 V 900 V RDS(on) < 2.5 Ω < 2.5 Ω TYPICAL RDS(on) = 2 Ω s E

FQP5N80 FQP5N80 800V N-Channel MOSFET September 2000 QFETTM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored t