STB55NF06, STP55NF06, STP55NF06FP N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet — production data Features Order code STB55NF06 STP5

55NF06 ® Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET „ DESCRIPTION 12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon

P5503QV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 22mΩ @VGS =10V -30V 60mΩ @VGS = -10V ID 7.5A -4.5A Channel N P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-So

P5506NVG N- & P- Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) NChannel PChannel 60 55mΩ @VGS = 10V -60 80mΩ @VGS = 10V ID 4.5A -3.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage

P5506BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 55mΩ @VGS =10V ID 5.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS

P5504EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 55mΩ @VGS = -10V ID -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage

Nch P55F6EN PowerMOSFET ■外観図 OUTLINE Package：FTO-220AG（3pin） Unit：mm 60V55A 特長 煙絶縁タイプ 煙低オン抵抗 煙１０V駆動 煙低容量 Feature 煙IsolatedPackage 煙LowRON 煙10VGateDrive 煙LowCapacitance 0000 55F6EN 外形図については�

P550HVN04.2 Product Specification Rev. 0.0 Model Name: P550HVN04.2 Issue Date : 2015/01/20 ()Preliminary Specifications ( )Final Specifications AUO Confidential For DATA_DISPLAY Internal Use Only On 2015/03/23 Customer Signature Date AUO Date Approved By ____________________