www.Datasheet.jp Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Cur

RFP4N05L, RFP4N06L Data Sheet July 1999 File Number 2876.2 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

STP4NC50 STP4NC50FP N-CHANNEL 500V - 2.2Ω - 3.5A TO-220/TO-220FP PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STP4NC50 500 V < 2.7 Ω 3.5 A STP4NC50FP 500 V < 2.7 Ω 3.5 A s TYPICAL RDS(on) = 2.2 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIG

STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK50Z STP4NK50ZFP STD4NK50Z STD4NK50Z-1 500 V < 2.7 Ω 3 A 45 W 500 V < 2.7 Ω 3 A 20 W 500 V < 2.7

STP4NA40 STP4NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA40 STP4NA40FI s s s s s s s V DSS 400 V 400 V R DS( on) < 2Ω < 2Ω ID 4A 2.8 A TYPICAL RDS(on) = 1.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DA

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability withou

® STP4NB100 STP4NB100FP N - CHANNEL 1000V - 4Ω - 3.8A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE ST P4NB100 ST P4NB100FP s s s s s V DSS 1000 V 1000 V R DS(on) < 4.4 Ω < 4.4 Ω ID 3.8 A 3.8 A TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY