PPJU2NA60 / PJP2NA60 / PJF2NA60 / PJD2NA60 600V N-Channel MOSFET Voltage Features  RDS(ON), VGS@10V,ID@1A<4.4Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low r

P2N4031 P2N4033 CASE 29-03, STYLE 1 TO-92 (TO-226AE) ONE WATT AMPLIFIER TRANSISTORS PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @To

P2N2907A Amplifier Transistor PNP Silicon Features • These are Pb--Free Devices* MAXIMUM RATINGS Rating Collector--Emitter Voltage Collector--Base Voltage Emitter--Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VC

Transys Electronics LIMITED NPN SILICON PLANAR SWITCHING TRANSISTORS P2N2222 P2N2222A EBC TO-92 Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise speci

P2N4031 P2N4033 CASE 29-03, STYLE 1 TO-92 (TO-226AE) ONE WATT AMPLIFIER TRANSISTORS PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @To

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation Ta = 25°C Derate above 25°C Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Ran