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Datasheet P2808B0 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 46 | P2803BMG | N-Channel Enhancement Mode MOSFET P2803BMG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 28mΩ @VGS = 10V
ID 6A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1
TA = 25 |
 UNIKC |
 |
| 45 | P2803HVG | N-Channel Enhancement Mode MOSFET P2803HVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 27.5mΩ @VGS = 10V
ID 6.5A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous |
UNIKC |
|
| 44 | P2803NVG | N & P-Channel Enhancement Mode MOSFET P2803NVG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 27.5mΩ @VGS = 10V
-30V
34mΩ @VGS = -10V
ID Channel 7A N -6A P
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 |
UNIKC |
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| 43 | P2803NVG | N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect Transistor
P2803NVG
SOP-8 Lead-Free
PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 27.5m 34m ID 7A -6A G : GATE D : DRAIN S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-S |
 NIKO-SEM |
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