P1203BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 12mΩ @VGS = 10V ID 11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIO

62.5 ±0.5 7,5 ±0.1 P1200A ... P1200G Version 2012-10-01 Ø 8 ±0.1 Type Ø 1.2 ±0.05 Dimensions - Maße [mm] P1200A ... P1200G Silicon Rectifier Diodes Silizium-Gleichrichterdioden Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Pla

P1210BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 12mΩ @VGS = 10V ID 8.7A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage V

62.5 ±0.5 7,5 ±0.1 P1200A ... P1200G Version 2012-10-01 Ø 8 ±0.1 Type Ø 1.2 ±0.05 Dimensions - Maße [mm] P1200A ... P1200G Silicon Rectifier Diodes Silizium-Gleichrichterdioden Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Pla

62.5 ±0.5 7,5 ±0.1 P1200A ... P1200G Version 2012-10-01 Ø 8 ±0.1 Type Ø 1.2 ±0.05 Dimensions - Maße [mm] P1200A ... P1200G Silicon Rectifier Diodes Silizium-Gleichrichterdioden Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Pla

Solid-State Relays Features Rugged, epoxy encapsulation construction 4,000 volts of optical isolation Subjected to full load test and six times the rated current surge before and after encapsulation Unique heat-spreader technology Guaranteed for life Opto 22 Power Series SSR im

P 1200 A ... P 1200 S Axial lead diode Standard silicon rectifier diodes .3  - 7  - A  - 2  - B  - 8  - C  -   - 1 =  >  4  >  > , 1,  4  >  > , #== # ( -  "  % - - #=1 # ( -  "