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Datasheet P0610BT Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
4 P0610BT   N-Channel Field Effect Transistor

NIKO-SEM N-Channel Enhancement Mode P0610BT Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 6.5mΩ ID2 120A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-
NIKO-SEM
NIKO-SEM
datasheet P0610BT pdf
3 P0610BT   N-Channel Enhancement Mode MOSFET

P0610BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 6.5mΩ @VGS = 10V ID2 120A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuou
UNIKC
UNIKC
datasheet P0610BT pdf
2 P0610BTF   N-Channel Field Effect Transistor

NIKO-SEM N-Channel Enhancement Mode P0610BTF Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 6.5mΩ ID 66A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-
NIKO-SEM
NIKO-SEM
datasheet P0610BTF pdf
1 P0610BTF   N-Channel Enhancement Mode MOSFET

P0610BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 6.5mΩ @VGS = 10V ID 66A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuou
UNIKC
UNIKC
datasheet P0610BTF pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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