OSD60-5T データシート PDFこの部品の機能は「(osdxx-5t) PhotovoltaIC」です。 |
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部品番号 |
OSD60-5T (OSDxx-5T) General Purpose Silicon Sensors General Purpose Silicon Sensors (Series 5T) The Centronic Series 5T detectors offer high blue sensitivity coupled with high shunt resistance and low dark leakage current. They are particularly suited CENTRONIC |
OSD60-5T (OSDxx-5T) Photovoltaic Photovoltaic Series Planar Diffused Silicon Photodiodes The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensit OSI |
文字列「 OSD605 」「 60 」で始まる検索結果です。 |
部品説明 |
01N60P AP01N60P AP01N60P Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G D S BVDSS RDS(ON) ID TO-22 Advanced Power Electronics |
0230600L Silicon Controlled Rectifier Microsemi Corporation |
0230600L Silicon Controlled Rectifier Microsemi Corporation |
02N60P SSM02N60P SSM02N60P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive-avalanche rated Fast-switching Simple drive requirement G D BV DSS RDS(ON) ID TO-220 600V 8Ω 2A Description S The TO-220 package is widely preferred for commercial and industrial applications. ETC |
02N60S5 SPN02N60S5 SPN02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra VDS RDS(on) ID 600 3 0.4 SOT-223 4 V Ω A low effective capacitances • Improved transconductance 2 Infineon Technologies |
03N60C3 SPP03N60C3 / SPD03N60C3 / SPA03N60C3 Final data SPP03N60C3, SPB03N60C3 SPA03N60C3 VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme P-TO220-3-31 P-TO2 Infineon Technologies |
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