OPE5594A データシート PDFこの部品の機能は「Gaas Infrared Emitter」です。 |
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部品番号 |
OPE5594A GaAs Infrared Emitter GaAs Infrared Emitter C OPE5594A 8.7 5.7 7.7 5.0 1.3 Max The OPE5594S is GaAlAs infrared emitting diode DIMENSIONS (Unit : mm) that is designed for high reliability, high radiant intensity and ETC |
文字列「 OPE5594 」「 5594A 」で始まる検索結果です。 |
部品説明 |
1N5594 Zener Diode / Rectifier New Jersey Semiconductor |
1N5594A Zener Diode / Rectifier New Jersey Semiconductor |
1N5594B Diode Zener Single 200V 5% 1W 2-Pin DO-41 Box New Jersey Semiconductor |
2SC5594 Silicon NPN Epitaxial High Frequency Low Noise Amplifier 2SC5594 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-798 (Z) 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz Outline CMPAK-4 2 3 1 Hitachi Semiconductor |
C5594 High Speed Amplifier for Photomultiplier Tubes HIGH SPEED AMPLIFIER FOR PHOTOMULTIPLIER TUBES C5594 SERIES Gain: 36 dB (Voltage Gain of 63) Frequency Bandwidth: 50 k to 1.5 GHz The C5594 is designed as the most suitable amplifier unit for photomultiplier tubes and a non-inverting type amplifier. This unit has high gain of 36 Hamamatsu |
MAX5594EUG Buffered / Fast-Settling / Octal / 12/10/8-Bit / Voltage-Output DACs 19-2983; Rev 0; 9/03 Buffered, Fast-Settling, Octal, 12/10/8-Bit, Voltage-Output DACs General Description The MAX5590–MAX5595 octal, 12/10/8-bit, voltage-output digital-to-analog converters (DACs) offer buffered outputs and a 3µs maximum settling time at the 12-bit level. The Maxim Integrated |
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