OPA2314-EP データシート PDFこの部品の機能は「Low Power Low Noise Rri/o 1.8v Cmos Op-amp」です。 |
検索結果を表示する |
部品番号 |
OPA2314-EP Low Power Low Noise RRI/O 1.8V CMOS Op-Amp Texas Instruments |
文字列「 OPA2314 」「 2314 」で始まる検索結果です。 |
部品説明 |
OPA2314 OPAx314 3-MHz Low-Power Low-Noise RRIO 1.8-V CMOS Operational Amplifier (Rev. G) Texas Instruments |
OPA2314-Q1 OPA2314-Q1 3-MHz Low-Power Low-Noise RRIO 1.8-V CMOS Operational Amplifier (Rev. A) Texas Instruments |
2SC2314 27MHz CB Transceiver Driver Applications Ordering number:EN485F NPN Epitaxial Planar Silicon Transistor 2SC2314 27MHz CB Transceiver Driver Applications Package Dimensions unit:mm 2009B [2SC2314] JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Em Sanyo Semicon Device |
2SC2314 NPN EPITAXIAL PLANAR SILICON TRANSISTORS TIGER ELECTRONIC CO.,LTD NPN EPITAXIAL PLANAR SILICON TRANSISTORS Product specification 2SC2314 DESCRIPTION 27 MHz CB Transceiver Driver Applications ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter l Value Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage TGS |
2SC2314 Silicon NPN Power Transistor isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2314 DESCRIPTION ·Collector-Emitter Voltage- :VCER= 75V(Min) ;RBE=150Ω ·Collector Current- :IC=1.0A ·Low Saturation Voltage : VCE(sat)=0.6V(MAX)@ IC=0.5A ·Minimum Lot-to-Lot variations for robust device performance Inchange Semiconductor |
2SK2314 Silicon N Channel MOS Type Field Effect Transistor 2SK2314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2314 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.) z High forward transfer admi Toshiba Semiconductor |
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