OP481 データシート PDFこの部品の機能は「Ultralow Power / Rail-to-rail Output Operational Amplifiers」です。 |
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部品番号 |
OP481 Ultralow Power / Rail-to-Rail Output Operational Amplifiers a FEATURES Low Supply Current: 4 A/Amplifier max Single-Supply Operation: 2.7 V to 12 V Wide Input Voltage Range Rail-to-Rail Output Swing Low Offset Voltage: 1.5 mV No Phase Reversal APPLICATIONS Analog Devices |
文字列「 OP481 」「 481 」で始まる検索結果です。 |
部品説明 |
0805USBN-481MRB Ultra Low Profile Common Mode Choke Document 1304-1 Ultra Low Profile Common Mode Choke 0805 • For noise suppression in super high speed signal lines: USB 3.x, HDMI 2.0, HDBaseT™, DisplayPort, DVI, etc.; and in high speed differential signal lines: USB 2.0, IEEE1394, LVDS, etc. • Up to 6.5 GHz differ Coilcraft |
0805USBN-481MRC Ultra Low Profile Common Mode Choke Document 1304-1 Ultra Low Profile Common Mode Choke 0805 • For noise suppression in super high speed signal lines: USB 3.x, HDMI 2.0, HDBaseT™, DisplayPort, DVI, etc.; and in high speed differential signal lines: USB 2.0, IEEE1394, LVDS, etc. • Up to 6.5 GHz differ Coilcraft |
0805USBN-481MRD Ultra Low Profile Common Mode Choke Document 1304-1 Ultra Low Profile Common Mode Choke 0805 • For noise suppression in super high speed signal lines: USB 3.x, HDMI 2.0, HDBaseT™, DisplayPort, DVI, etc.; and in high speed differential signal lines: USB 2.0, IEEE1394, LVDS, etc. • Up to 6.5 GHz differ Coilcraft |
1481 P-Channel Enhancement Mode Power MOSFET Shenzhen Tuofeng Semiconductor Technology Co., Ltd 1481 NCE P-Channel Enhancement Mode Power MOSFET Description The 1481 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load swi Tuofeng Semiconductor |
1N4481 1.5 WTT GLASS ZENER DIODES Microsemi Corporation |
1N4481 (1N4460 - 1N4496) SILICON ZENER DIODES Certificate TH97/10561QM Certificate TW00/17276EM 1N4460 - 1N4496 and 1N6485 - 1N6491 VZ : 3.3 - 200 Volts PD : 1.5 Watts FEATURES : * Silicon power zener diodes * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage cur EIC discrete Semiconductors |
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