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Datasheet OH10003 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | OH10003 | GaAs Hall Device GaAs Hall Devices
OH10003
GaAs Hall Device
Magnetic sensor I Features
• Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β |  Panasonic Semiconductor | data |
OH1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | OH10003 | GaAs Hall Device GaAs Hall Devices
OH10003
GaAs Hall Device
Magnetic sensor I Features
• Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β Panasonic Semiconductor data | | |
| 2 | OH10004 | GaAs Hall Device GaAs Hall Devices
OH10004
GaAs Hall Device
Magnetic sensor I Features
• Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β Panasonic Semiconductor data | | |
| 3 | OH10008 | GaAs Hall Device GaAs Hall Devices
OH10008
GaAs Hall Device
Magnetic sensor
• Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 750 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.0 Panasonic Semiconductor data | | |
| 4 | OH10009 | GaAs Hall Device GaAs Hall Devices
OH10009
GaAs Hall Device
Magnetic sensor I Features
• Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β Panasonic Semiconductor data | | |
| 5 | OH10010 | GaAs Hall Device GaAs Hall Devices
OH10010
GaAs Hall Device
Magnetic sensor I Features
• Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β Panasonic Semiconductor data | | |
| 6 | OH137 | Unipolar Hall Effect Switch IC Free Datasheet http://www.Datasheet4U.com
OH137
Unipolar Hall Effect Switch IC
Order Information PN OH137 Operate temperature -40～85℃ Package 1000pcs/bag General Description: OH137 is a switched Hall-Effect IC which is for contactless switching applications. The device includes an on-chip Hall  Nanjing Ouzhuo Technology data | | |
| 7 | OH137 | Hall switch circuit 深 圳 市 微 波 卡 特 电 子 有 限 公 司
电 地 话： 址: 86-0755-81697750 深 圳 市 宝 安 28955821 44 区 安 乐 工 传真：86-0755-28955821 业 园 4 巷 3 栋
OH137 霍尔开关电路
概述 OH137 霍尔开关电路由反向电压保护器、电压调整器，霍尔电压发  Carter Microwave data | |
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