| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | OD-880FHT | HIGH TEMPERATURE GaAlAs IR EMITTERS HIGH TEMPERATURE GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME ANODE (CASE) .015 .209 .220 OD-880FHT FEATURES • Extended operating temperature range • No internal coatings • No derating or heat sink required to 80°C All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. .183 .186 .152 .154 .100 |
 OPTO DIODE |
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Recommended search results related to OD-880FHT |
| Part No | Description ( Function) | Manufacturers | |
| OD-880-C | HIGH-POWER GaAlAs IR EMITTER CHIPS HIGH-POWER GaAlAs IR EMITTER CHIPS FEATURES OD-880-C .014 • High reliability LPE GaAlAs IRLED chips • Graded-bandgap LED structure for high radiant power output .014 • 880nm peak emission • Good bondability • Good ohmic contacts (gold alloys) EMITTING SURFACE ww |
 OptoDiode |
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| OD-880E | HIGH-POWER GaAlAs IR EMITTERS HIGH-POWER GaAlAs IR EMITTERS FEATURES EPOXY DOME .145 MAX .080 .017 .178 .195 ANODE (CASE) OD-880E • High reliability liquid-phase epitaxially grown GaAlAs .209 .220 • 880nm peak emission • High uniform output • TO-46 Header .100 .041 All dimensions are nominal in i |
OptoDiode |
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| OD-880F | HIGH-POWER GaAlAs IR EMITTERS HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package • Nar |
OPTO DIODE |
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| OD-880F | HIGH-POWER GaAlAs IR EMITTERS HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES ANODE (CASE) .209 .212 • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sea |
OptoDiode |
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| OD-880L | HIGH-POWER GaAlAs IR EMITTERS HIGH-POWER GaAlAs IR EMITTERS OD-880L FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package • Medium emission angle fo |
OPTO DIODE |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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