NX6308GH データシート PDFこの部品の機能は「Ingaasp Mqw-dfb Laser Diode」です。 |
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部品番号 |
NX6308GH InGaAsP MQW-DFB LASER DIODE LASER DIODE NX6308GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6308GH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) California Eastern Labs |
文字列「 NX6308 」「 6308GH 」で始まる検索結果です。 |
部品説明 |
2N6308 NPN POWER SILICON TRANSISTOR TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices 2N6306 2N6308 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Microsemi Corporation |
2N6308 NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Central Semiconductor Corp |
2N6308 Silicon Power Transistors SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers, an SavantIC |
2N6308 Trans GP BJT NPN 350V 8A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor |
2N6308 Transistor Transistor Description: High voltage, TO-3, NPN, Silicon, Power Transistor. Designed for high voltage inverters, switching regulators and line – operated amplifier applications. Especially well suited for switching power supply applications in associated consumer products. Fe Multicomp |
2N6308 Bipolar NPN Device 2N6308 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675 Seme LAB |
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