Datasheet NX6306 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NX6306	LASER DIODE PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE NX6306 SERIES FOR 155 Mb/s and 622 Mb/s APPLICATIONS DESCRIPTION NEC's NX6306 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This device is	CEL

NX6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NX6309GH	InGaAsP MQW-DFB LASER DIODE LASER DIODE NX6309GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6309GH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION • 1.25 Gb/s FTTH PON (Fi	California Eastern Labs
NX60T0-32SAA9-SP	I/O Card Interface Connectors I/O Card Interface Connectors NX Series 3. ESD Secure Thermoplastic molded covers assures insulation of the connections and shields from ESD. 4. Secure Latching A built-in latch assures correct and secure mating of connector. 5. Reliable Conductor Termination Reliable terminati	Hirose Electric
NX6342EP	1 310nm AlGaInAs MQW-DFB LASER DIODE A Business Partner of Renesas Electronics Corporation. Preliminary NX6342EP LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION DESCRIPTION The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode	California Eastern Labs

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Número de pieza	Descripción	Fabricantes	PDF
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