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Datasheet NX5P1100 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | NX5P1100 | Logic controlled high-side power switch NX5P1100
Logic controlled high-side power switch
Rev. 1 — 21 March 2014
Product data sheet
1. General description
The NX5P1100 is an advanced power switch and ESD-protection device for USB OTG applications. It includes under voltage and over voltage lockout, over-current, over-temperature, rever |  NXP Semiconductors | data |
NX5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NX5032SA | Crystal Units CRYSTAL UNITS
For Mobile Communication SURFACE MOUNT TYPE CRYSTAL UNITS / NX5032SA
This is highly precise small-sized surface-mounted crystal unit optimum for applications in mobile communications.
■ Features
8 Compact and thin (5.0 × 3.2 × 0.75 mm typ.). 8 Standard Nominal Frequency for PLL-sy  ETC data | | |
| 2 | NX5032SD | Crystal Units Specification of Crystal Units
1 NDK Part Number 2 NDK Specification Number 3 Type
4 Electrical Characteristics 4.1 Nominal Frequency (f nom)
4.2 Overtone order 4.3 Frequency Tolerance 4.4 Frequency Versus
Temperature Characteristics 4.5 Equivalent Series Resistance (R r ) 4.6 Shunt Capacitance (C ETC data | | |
| 3 | NX5302 | InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5302 Series FOR FIBER OPTIC COMMUNICATIONS
FEATURES
• OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • HIGH SPEED: tr = 0.15 ns MAX tf = 0.3 ns MAX • WIDE OPERATING TEMPERATURE RANGE: TC = -40 to +85°C • In  CEL diode | | |
| 4 | NX5304 | InGaAsP MQW-FP LASER DIODE DATA SHEET
NEC's 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER PO = 5.0 mW • LOW THRESHOLD CURRENT Ith = 10 mA • HIGH SPEED tr = 0.3 ns MAX tf = 0.3 ns MAX • WIDE OPERATING TEMPERATURE RANGE TC = -40 to +8  California Eastern Labs diode | | |
| 5 | NX5306 | NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5306 SERIES FOR 155 Mb/s and 622 Mb/s APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • HIGH SPEED: tr = 0.3 ns MAX tf = 0.3 ns MAX • WIDE OPERATING TEMPERATURE RANGE: TC = -40 to +85�  NEC diode | | |
| 6 | NX5306EHNX5306EK | NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5306 SERIES FOR 155 Mb/s and 622 Mb/s APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • HIGH SPEED: tr = 0.3 ns MAX tf = 0.3 ns MAX • WIDE OPERATING TEMPERATURE RANGE: TC = -40 to +85� NEC diode | | |
| 7 | NX5306EHNX5306EK | NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5306 SERIES FOR 155 Mb/s and 622 Mb/s APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • HIGH SPEED: tr = 0.3 ns MAX tf = 0.3 ns MAX • WIDE OPERATING TEMPERATURE RANGE: TC = -40 to +85� NEC diode | |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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