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Datasheet NX5313 Equivalent ( PDF ) |
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| 4 | NX5313 | LASER DIODE PRELIMINARY DATA SHEET
LASER DIODE
NX5313 Series
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1 |
 Renesas |
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| 3 | NX5313 | LASER DIODE PRELIMINARY DATA SHEET
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5313 SERIES FOR FTTH PON APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE: TC = -40 to |
 CEL |
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| 2 | NX5313EH | LASER DIODE PRELIMINARY DATA SHEET
LASER DIODE
NX5313 Series
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1 |
Renesas |
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| 1 | NX5313EK | LASER DIODE PRELIMINARY DATA SHEET
LASER DIODE
NX5313 Series
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1 |
Renesas |
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