NVMFS5C612NL データシート PDFこの部品の機能は「Power Mosfet ( Transistor )」です。 |
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部品番号 |
NVMFS5C612NL Power MOSFET ( Transistor ) NVMFS5C612NL Power MOSFET 60 V, 1.5 mW, 235 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to ON Semiconductor |
文字列「 NVMFS5C612 」「 5C612NL 」で始まる検索結果です。 |
部品説明 |
1N5612 Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors 1N5610 thru 1N5613 Available on commercial versions Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors Qualified per MIL-PRF-19500/434 DESCRIPTION This series of industry recognized voidless hermetically sealed unidirectional Transient Voltage Suppresso Microsemi |
1N5612 Diode TVS Single Uni-Dir 49V 1.5KW 2-Pin Case G New Jersey Semiconductor |
2N5612 (2N5606 - 2N5612) Silicon NPN Power Transistors SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and sw SavantIC |
2N5612 Bipolar NPN Device 2N5612 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 100V IC = 5A 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590 Seme LAB |
2N5612A Silicon NPN Power Transistors SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5612A DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications SavantIC |
2SC5612 SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR 2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV l High Voltage l Low Saturation Voltage l High Speed : VCBO = 2000 V : VCE (sat) = 3 V (Max.) : tf = 0.15µs (Typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C) CHARA Toshiba Semiconductor |
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