NVMFS5832NL データシート PDFこの部品の機能は「Power Mosfet ( Transistor )」です。 |
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部品番号 |
NVMFS5832NL Power MOSFET ( Transistor ) NVMFS5832NL Power MOSFET Features 40 V, 4.2 mW, 120 A, Single N−Channel • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacita ON Semiconductor |
文字列「 NVMFS5832 」「 5832NL 」で始まる検索結果です。 |
部品説明 |
1N5832 40 Amp Schottky Rectifier Microsemi Corporation |
1N5832 (1N5832 - 1N5834R) Schottky Power Diode Naina Semiconductor Ltd. Schottky Power Diode, 40A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity 1N5832 thru 1N5834R DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless othe Naina Semiconductor |
1N5832 (1N5832 - 1N5834R) Silicon Power Schottky Diode Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ America Semiconductor |
1N5832 Diode Schottky 20V 40A 2-Pin DO-5 New Jersey Semiconductor |
1N5832 Silicon Power Schottky Diode Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5832 thru 1N5834R VRRM = 20 V - 40 V IF(AV) = 40 A DO-5 P GeneSiC |
1N5832 SCHOTTKY DIODES Transys Electronics LIMITED 1N5832(R) THRU 1N5834(R) SCHOTTKY DIODES STUD TYPE Features High Surge Capability Types up to 40V V RRM 40 A 40Amp Rectifier 20-40 Volts Maximum Ratings Operating Temperature: -65 C to +150 Storage Temperature: -65 C to +175 Part Number 1N5832(R) TRANSYS |
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