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Datasheet NVMFS4C03N Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
5 NVMFS4C03N   Power MOSFET ( Transistor )

NVMFS4C03N Power MOSFET 30 V, 2.1 mW, 143 A, Single N−Channel Logic Level, SO−8FL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C03NWF − Wettable Flanks Option for Enhanced
 ON Semiconductor
ON Semiconductor		 datasheet NVMFS4C03N pdf
4 NVMFS4C03NT1G   Power MOSFET ( Transistor )

NVMFS4C03N Power MOSFET 30 V, 2.1 mW, 143 A, Single N−Channel Logic Level, SO−8FL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C03NWF − Wettable Flanks Option for Enhanced
 ON Semiconductor
ON Semiconductor		 datasheet NVMFS4C03NT1G pdf
3 NVMFS4C03NT3G   Power MOSFET ( Transistor )

NVMFS4C03N Power MOSFET 30 V, 2.1 mW, 143 A, Single N−Channel Logic Level, SO−8FL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C03NWF − Wettable Flanks Option for Enhanced
 ON Semiconductor
ON Semiconductor		 datasheet NVMFS4C03NT3G pdf
2 NVMFS4C03NWFT1G   Power MOSFET ( Transistor )

NVMFS4C03N Power MOSFET 30 V, 2.1 mW, 143 A, Single N−Channel Logic Level, SO−8FL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C03NWF − Wettable Flanks Option for Enhanced
 ON Semiconductor
ON Semiconductor		 datasheet NVMFS4C03NWFT1G pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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