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Datasheet NVMFS4C01N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | NVMFS4C01N | Power MOSFET ( Transistor ) NVMFS4C01N
Power MOSFET
30 V, 0.9 mW, 319 A, Single N−Channel, Logic Level, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C01NWF − Wettable Flanks Option for Enhanced |
 ON Semiconductor |
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| 4 | NVMFS4C01NT1G | Power MOSFET ( Transistor ) NVMFS4C01N
Power MOSFET
30 V, 0.9 mW, 319 A, Single N−Channel, Logic Level, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C01NWF − Wettable Flanks Option for Enhanced |
ON Semiconductor |
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| 3 | NVMFS4C01NT3G | Power MOSFET ( Transistor ) NVMFS4C01N
Power MOSFET
30 V, 0.9 mW, 319 A, Single N−Channel, Logic Level, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C01NWF − Wettable Flanks Option for Enhanced |
ON Semiconductor |
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| 2 | NVMFS4C01NWFT1G | Power MOSFET ( Transistor ) NVMFS4C01N
Power MOSFET
30 V, 0.9 mW, 319 A, Single N−Channel, Logic Level, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C01NWF − Wettable Flanks Option for Enhanced |
ON Semiconductor |
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