NVGS3130N データシート PDFこの部品の機能は「Power Mosfet ( Transistor )」です。 |
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部品番号 |
NVGS3130N Power MOSFET ( Transistor ) NTGS3130N, NVGS3130N Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 Features • Leading Edge Trench Technology for Low On Resistance • Low Gate Charge for Fast Switching • Small Size (3 x 2. ON Semiconductor |
文字列「 NVGS3130 」「 3130N 」で始まる検索結果です。 |
部品説明 |
2SC3130 Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing) Transistor 2SC3130 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 2.8 –0.3 +0.2 s Features q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 0.95 q High transition frequency fT. Small collector output capa Panasonic Semiconductor |
2SC3130 Silicon NPN RF Transistor INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC3130 DESCRIPTION ·High Current-Gain Bandwidth Product ·Small Output Capacitance APPLICATIONS ·Designed for high-frequency amplification, oscillation, mixing applications. ABSOLUTE MAXIMUM Inchange Semiconductor |
2SC3130 Silicon NPN transistor 2SC3130 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 特征频率 fT 高,共基极输出电容小和反向传输出电容小。 High fT, small Cob and s BLUE ROCKET ELECTRONICS |
2SC3130 NPN Transistors SMD Type Transistors NPN Transistors 2SC3130 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=10V +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.1 Kexin |
2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3130 Switching Regulator Applications Unit: mm • • • • • • Reverse-recovery time: trr = 85 ns Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.) Toshiba Semiconductor |
3130 HALL-EFFECT SWITCHES
Allegro MicroSystems |
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