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Datasheet NUS1204MN Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NUS1204MNOvervoltage Protection IC

NUS1204MN Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP304 overvoltage protection circuit (OVP) with a −12 V P−Channel power MOSFET. It is specifically designed to protect sensitive electron
ON Semiconductor
ON Semiconductor		data


NUS Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NUS1204MNOvervoltage Protection IC

NUS1204MN Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP304 overvoltage protection circuit (OVP) with a −12 V P−Channel power MOSFET. It is specifically designed to protect sensitive electron
ON Semiconductor
ON Semiconductor		data
2NUS2045MN(NUS2045MN / NUS3045MN) Overvoltage Protection IC

NUS2045MN, NUS3045MN Overvoltage Protection IC with Integrated MOSFET These devices represent a new level of safety and integration by combining the NCP345 overvoltage protection circuit (OVP) with a 20 V P−channel power MOSFET (NUS2045MN) or with a 30 V P−channel power MOSF
ON Semiconductor
ON Semiconductor		data
3NUS2401SNT1Integrated PNP/NPN Digital Transistors Array

NUS2401SNT1 Integrated PNP/NPN Digital Transistors Array This new option of integrated digital transistors is designed to replace a discrete solution array of three transistors and their external resistor bias network. BRTs (Bias Resistor Transistors) contain a single transistor
ON Semiconductor
ON Semiconductor		transistor
4NUS2501W6Integrated NPN Digital Transistor

NUS2501W6 Integrated NPN Digital Transistor with Switching Diode Array This new option of integrated devices is designed to replace a discrete solution of a single transistor with three switching diodes. BRT (Bias Resistor Transistor) contains a single transistor with a monolith
ON Semiconductor
ON Semiconductor		transistor
5NUS3045MN(NUS2045MN / NUS3045MN) Overvoltage Protection IC

NUS2045MN, NUS3045MN Overvoltage Protection IC with Integrated MOSFET These devices represent a new level of safety and integration by combining the NCP345 overvoltage protection circuit (OVP) with a 20 V P−channel power MOSFET (NUS2045MN) or with a 30 V P−channel power MOSF
ON Semiconductor
ON Semiconductor		data
6NUS3046MNOvervoltage Protection IC

NUS3046MN Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP346 overvoltage protection circuit (OVP) with a 30 V P−channel power MOSFET. This IC is specifically designed to protect sensitive electr
ON Semiconductor
ON Semiconductor		data
7NUS3116MTMain Switch Power MOSFET and Dual Charging BJT

www.DataSheet4U.net NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce(sat) Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout spa
ON Semiconductor
ON Semiconductor		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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