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Datasheet NTY100N10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | NTY100N10 | Power MOSFET, Transistor NTY100N10
Preferred Device
Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package
Features
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • Pb−Free Pac |  ON Semiconductor | mosfet |
NTY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NTY100N10 | Power MOSFET, Transistor NTY100N10
Preferred Device
Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package
Features
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • Pb−Free Pac ON Semiconductor mosfet | |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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