NTTFS4C05N データシート PDFこの部品の機能は「Power Mosfet ( Transistor )」です。 |
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部品番号 |
NTTFS4C05N Power MOSFET ( Transistor ) NTTFS4C05N Power MOSFET Features 30 V, 75 A, Single N−Channel, m8FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Mini ON Semiconductor |
文字列「 NTTFS4C05 」「 4C05N 」で始まる検索結果です。 |
部品説明 |
NTTFS4C05NTAG Power MOSFET ( Transistor ) NTTFS4C05N Power MOSFET Features 30 V, 75 A, Single N−Channel, m8FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are ON Semiconductor |
NTTFS4C05NTWG Power MOSFET ( Transistor ) NTTFS4C05N Power MOSFET Features 30 V, 75 A, Single N−Channel, m8FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are ON Semiconductor |
0405-1000M UHF Pulsed Radar 0405-1000M R3 . 0405-1000M 1000 Watts - 40 Volts, 300µs, 10% UHF Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The 0405-1000M is an internally matched, COMMON EMITTER transistor capable of providing 1000 Watts of pulsed RF output power in a push-pull configuration at three hu Microsemi Corporation |
0405B20220 Your right power solution RSG Electronic |
0405B24216 Your right power solution RSG Electronic |
0405SC-2200M Class AB 406 to 450 MHz Silicon Carbide SIT 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSI Microsemi |
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