NTP22N06L データシート PDFこの部品の機能は「Power Mosfet ( Transistor )」です。 |
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部品番号 |
NTP22N06L Power MOSFET ( Transistor ) NTP22N06L, NTB22N06L Power MOSFET 22 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power mo ON Semiconductor |
文字列「 NTP22N06 」「 22N06L 」で始まる検索結果です。 |
部品説明 |
NTP22N06 Power MOSFET ( Transistor ) NTP22N06, NTB22N06 Power MOSFET 22 Amps, 60 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • Power Supplies • Converters • Pow ON Semiconductor |
2206 2.5W Dual Audio Power Amp UNISONIC TECHNOLOGIES CO., LTD 2206 LINEAR INTEGRATED CIRCUIT 2.5W DUAL AUDIO POWER AMP DESCRIPTION The UTC 2206 is a monolithic integrated circuit consisting of a 2-channel power amplifier .It is suitable for stereo and bridge amplifier application of radio cassette tape Unisonic Technologies |
2206CP XR-2206 XR-2206 ...the analog plus company TM Monolithic Function Generator June 1997-3 FEATURES D Low-Sine Wave Distortion, 0.5%, Typical D Excellent Temperature Stability, 20ppm/°C, Typ. D Wide Sweep Range, 2000:1, Typical D Low-Supply Sensitivity, 0.01%V, Typ. D Linear Amplitude Mo Exar Corporation |
2206FM TV2206FM TV22..F TV22..F Fast Recovery Diode Replaces March 1998 version, DS4210-2.2 DS4210-3.0 January 2000 APPLICATIONS s Induction Heating s A.C. Motor Drives s Snubber Diode s Welding s High Frequency Rectification s UPS KEY PARAMETERS VRRM 1600V IF(AV) 305A IF Dynex Semiconductor |
2SC2206 Silicon NPN epitaxial planer type(For high-frequency amplification) Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1254 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 Unit: mm s Features q q q 1.5 R0.9 R0.9 0.85 0.55±0.1 0.45±0.05 1.25±0.05 s Absolute Maximum Ratings Panasonic Semiconductor |
2SD2206 Silicon NPN Epitaxial Type TRANSISTOR 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low satura Toshiba Semiconductor |
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