NTP-7412S データシート PDF 検索 |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 177 | NTP-8230 | Power Driver Integrated Full Digital Audio Amplifier Power Driver Integrated Full Digital Audio Amplifier NTP-8230 NTP-8230 High Performance, High Fidelity Power Driver Integrated Full Digital Audio Amplifier Datasheet Revision 0.1 Copyright ⓒ NeoFidelity, Inc. Document Number: DS8230 draft ver. 0.1 Page 1 2011-01-11 Free Datasheet http://www.Datasheet.jp/ Power Driver Integrated Full Digital Audio Amplifier NTP-8230 |
 NeoFidelity |
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| 176 | NTP10N40 | Power MOSFET NTP10N40, NTB10N40 Preferred Device Advance Information Power MOSFET 10 Amps, 400 Volts N−Channel TO−220 and D2PAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Features • Higher Current Rating • Lower RDS(on) • Lower Capacitances • Lower Total Gate Charge • Tighter VSD Specif |
 ON Semiconductor |
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| 175 | NTP125N02R | Power MOSFET 125 A/ 24 V N-Channel TO-220/ D2PAK NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK Features • Planar HD3e Process for Fast Switching Performance • Body Diode for Low trr and Qrr and Optimized for Synchronous • • • Operation Low Ciss to Minimize Driver Loss Optimized Qgd and RDS(on) for Shoot−through Protection Low Gate Charge http://onsemi.com 125 AMPERES, 24 VOLTS RDS( |
ON Semiconductor |
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| 174 | NTP125N02R | Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK Features • Planar HD3e Process for Fast Switching Performance • Body Diode for Low trr and Qrr and Optimized for Synchronous • • • Operation Low Ciss to Minimize Driver Loss Optimized Qgd and RDS(on) for Shoot−through Protection Low Gate Charge http://onsemi.com 125 AMPERES, 24 VOLTS RDS( |
ON Semiconductor |
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| 173 | NTP13N10 | Power MOSFET NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Pb−Free Package is Available VDSS 100 V http://onsemi.com RDS(ON) TYP 165 mΩ @ 10 V N−Channe |
ON Semiconductor |
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| 172 | NTP18N06 | Power MOSFET NTP18N06, NTB18N06 Power MOSFET 15 A, 60 V, N−Channel TO−220 & D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. N−Channel Typical Applications D V(BR)DSS 60 V G S www.Datasheet.jp http://onsemi.com RDS(on) TYP 90 mW @ 10 V ID MAX 15 A • • • • • Power Supplies Conve |
ON Semiconductor |
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| 171 | NTP18N06L | Power MOSFET www.Datasheet.jp NTP18N06L, NTB18N06L Power MOSFET 15 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications http://onsemi.com • • • • Power Supplies Converters Power Motor Controls Bridge Circuits 15 AMP |
ON Semiconductor |
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 Realtek |
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