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Datasheet NTJS4405N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NTJS4405N | Small Signal MOSFET
NTJS4405N Small Signal MOSFET
25 V, 1.2 A, Single, N−Channel, SC−88
Features
• Advance Planar Technology for Fast Switching, Low RDS(on) • Higher Efficiency Extending Battery Life • Pb−Free Packages are Available
Applications
V(BR)DSS 25 V
http://onsemi.com
RDS(on) | ON Semiconductor | mosfet |
NTJ Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NTJD1155L | Power MOSFET, Transistor NTJD1155L
Power MOSFET
8 V, +1.3 A, High Side Load Switch with Level−Shift, P−Channel SC−88
The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high lo ON Semiconductor mosfet | | |
2 | NTJD2152P | Trench Small Signal MOSFET NTJD2152P Trench Small Signal MOSFET
8 V, Dual P−Channel, SC−88 ESD Protection
Features http://onsemi.com
V(BR)DSS RDS(on) TYP 0.22 W @ −4.5 V −8 V 0.32 W @ −2.5 V 0.51 W @ −1.8 V −0.775 A ID Max
• • • • • • • • •
Leading –8 V Trench for Low RDS(ON) Performance ES ON Semiconductor mosfet | | |
3 | NTJD4001N | Small Signal MOSFET NTJD4001N, NVTJD4001N
Small Signal MOSFET
30 V, 250 mA, Dual N−Channel, SC−88
Features
• Low Gate Charge for Fast Switching • Small Footprint − 30% Smaller than TSOP−6 • ESD Protected Gate • AEC Q101 Qualified − NVTJD4001N • These Devices are Pb−Free and are RoHS Compliant
App ON Semiconductor mosfet | | |
4 | NTJD4105C | Small Signal MOSFET
NTJD4105C Small Signal MOSFET
20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88
Features
• • • • •
Complementary N and P Channel Device Leading −8.0 V Trench for Low RDS(on) Performance ESD Protected Gate − ESD Rating: Class 1 SC−88 Package for Smal ON Semiconductor mosfet | | |
5 | NTJD4152P | Trench Small signal MOSFET
NTJD4152P Trench Small Signal MOSFET
20 V, 0.88 A, Dual P−Channel, ESD Protected SC−88
Features http://onsemi.com
V(BR)DSS RDS(on) Typ 215 mW @ −4.5 V −20 V 345 mW @ −2.5 V 600 mW @ −1.8 V −0.88 A ID Max
• • • • • • • •
Leading Trench Technology f ON Semiconductor mosfet | | |
6 | NTJD4158C | Small Signal MOSFET NTJD4158C
Small Signal MOSFET
30 V/−20 V, +0.25/−0.88 A, Complementary, SC−88
Features
• Leading 20 V Trench for Low RDS(on) Performance • ESD Protected Gate • SC−88 Package for Small Footprint (2 x 2 mm)
Applications
http://onsemi.com
V(BR)DSS N−Ch 30 V P−Ch ON Semiconductor mosfet | | |
7 | NTJD4401N | Small Signal MOSFET NTJD4401N Small Signal MOSFET
20 V, Dual N−Channel, SC−88 ESD Protection
Features
• • • • • • • • •
Small Footprint (2 x 2 mm) Low Gate Charge N−Channel Device ESD Protected Gate Same Package as SC−70 (6 Leads) Pb−Free Packages are Available
http://onsemi.com
V(BR)DSS ON Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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