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Datasheet NTHD4N02F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | NTHD4N02F | Power MOSFET and Schottky Diode NTHD4N02F Power MOSFET and Schottky Diode
20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt
Features http://onsemi.com MOSFET
V(BR)DSS 20 V RDS(on) TYP 60 mW @ 4.5 V 80 mW @ 2.5 V ID MAX 3.9 A
• • • • •
Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Sm |
 ON Semiconductor |
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| 2 | NTHD4N02FT1 | Power MOSFET and Schottky Diode NTHD4N02F Power MOSFET and Schottky Diode
20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt
Features http://onsemi.com MOSFET
V(BR)DSS 20 V RDS(on) TYP 60 mW @ 4.5 V 80 mW @ 2.5 V ID MAX 3.9 A
• • • • •
Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Sm |
ON Semiconductor |
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| 1 | NTHD4N02FT1G | Power MOSFET and Schottky Diode NTHD4N02F Power MOSFET and Schottky Diode
20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt
Features http://onsemi.com MOSFET
V(BR)DSS 20 V RDS(on) TYP 60 mW @ 4.5 V 80 mW @ 2.5 V ID MAX 3.9 A
• • • • •
Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Sm |
ON Semiconductor |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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