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Datasheet NTE88 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | NTE88 | Silicon Complementary Transistors NTE87 (NPN) & NTE88 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner
for Linear Applications
Description: The NTE87 (NPN) and NTE88 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other li |  NTE | transistor |
| 2 | NTE887 | Integrated Circuit Low Power / JFET OP Amplifier NTE887M Integrated Circuit Low Power, JFET OP Amplifier
Description: The NTE887M is a JFET–input operational amplifier in an 8–Lead DIP type package designed as a low–power version of the NTE857M amplifier. This device features high input impedance, wide bandwidth, high slew rate, and low inpu |  NTE Electronics | amplifier |
| 3 | NTE887M | Integrated Circuit Low Power / JFET OP Amplifier NTE887M Integrated Circuit Low Power, JFET OP Amplifier
Description: The NTE887M is a JFET–input operational amplifier in an 8–Lead DIP type package designed as a low–power version of the NTE857M amplifier. This device features high input impedance, wide bandwidth, high slew rate, and low inpu | NTE Electronics | amplifier |
| 4 | NTE888 | Integrated Circuit Low Power Programmable Operational Amplifier NTE888M Integrated Circuit Low Power Programmable Operational Amplifier
Description: The NTE888M is an operational amplifier in an 8–Lead DIP type package featuring low power consumption and high input impedance. In addition, the quiescent currents within this device may be programmed by the choic | NTE Electronics | amplifier |
| 5 | NTE888M | Integrated Circuit Low Power Programmable Operational Amplifier NTE888M Integrated Circuit Low Power Programmable Operational Amplifier
Description: The NTE888M is an operational amplifier in an 8–Lead DIP type package featuring low power consumption and high input impedance. In addition, the quiescent currents within this device may be programmed by the choic | NTE Electronics | amplifier |
NTE Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NTE | Isolated 1W Single Output SM DC/DC Converters C&D Technologies converter | | |
| 2 | NTE-247 | Silicon Complementary Transistors Darlington Power Amplifier NTE transistor | | |
| 3 | NTE0303M | Isolated 1W Single Output SM DC/DC Converters C&D Technologies converter | | |
| 4 | NTE0303MC | Isolated 1W Single Output SM DC/DC Converters www.murata-ps.com
NTE Series
Isolated 1W Single Output SM DC/DC Converters
FEATURES RoHS compliant Lead frame technology Single isolated output 1kVDC Isolation Efficiency up to 78% Power density 1.8W/cm3 Wide temperature performance at full
1 Watt load, –40°C to 85°C U  Murata converter | | |
| 5 | NTE0305M | Isolated 1W Single Output SM DC/DC Converters C&D Technologies converter | | |
| 6 | NTE0305MC | Isolated 1W Single Output SM DC/DC Converters www.murata-ps.com
NTE Series
Isolated 1W Single Output SM DC/DC Converters
FEATURES RoHS compliant Lead frame technology Single isolated output 1kVDC Isolation Efficiency up to 78% Power density 1.8W/cm3 Wide temperature performance at full
1 Watt load, –40°C to 85°C U Murata converter | | |
| 7 | NTE0309MC | Isolated 1W Single Output SM DC/DC Converters www.murata-ps.com
NTE Series
Isolated 1W Single Output SM DC/DC Converters
FEATURES RoHS compliant Lead frame technology Single isolated output 1kVDC Isolation Efficiency up to 78% Power density 1.8W/cm3 Wide temperature performance at full
1 Watt load, –40°C to 85°C U Murata converter | |
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| Número de pieza | Descripción | Fabricantes | |
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