NTE5810 データシート PDFこの部品の機能は「SilICon Power Rectifier Diode / 12 Amp」です。 |
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部品番号 |
NTE5810 Silicon Power Rectifier Diode / 12 Amp NTE5810 & NTE5811, NTE5870 thru NTE5891 Silicon Power Rectifier Diode, 12 Amp Description: The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier diodes in a DO4 typ NTE Electronics |
文字列「 NTE5810 」「 5810 」で始まる検索結果です。 |
部品説明 |
1N5810 ULTRA FAST RECTIFIERS Microsemi Corporation |
1N5810 Diode Switching 8A 2-Pin GPR-4AM New Jersey Semiconductor |
1N5810 DIODE Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IZM) Current, Surge (IFM) at tp = 8.3 ms Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-A) M DSI |
1N5810 RECTIFIERS Solid State |
1N5810 HIGH EFFICIENCY RECTIFIERS 1N5807-1N5811 High-reliability discrete products and engineering services since 1977 HIGH EFFICIENCY RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn Digitron Semiconductors |
1N5810-M DIODE Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IZM) Current, Surge (IFM) at tp = 8.3 ms Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-A) M DSI |
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