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Datasheet NTE48 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | NTE48 | Silicon NPN Transistor Darlington / General Purpose Amplifier / High Current NTE48 Silicon NPN Transistor Darlington, General Purpose Amplifier, High Current
Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Base Voltage, VCBO . . . . . . . . |
 NTE |
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| 8 | NTE480 | Silicon NPN Transistor RF Power Output for Broadband Amp / PO = 40W @ 512MHz NTE480 Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz
Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors t |
NTE |
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| 7 | NTE4828 | Surge Clamping / Transient Overvoltage Suppressor Unidirectional NTE4828 thru NTE4868 Surge Clamping, Transient Overvoltage Suppressor Unidirectional
Description: The NTE4800 Series of high power transient suppressors are Silicon PN Junction devices designed for absorbtion of high voltage transients associated with power disturbances, switching and induced lighti |
NTE |
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| 6 | NTE483 | Silicon NPN Transistor RF Power Output for Mobile Use / PO = 18W @ 866MHz NTE483 Silicon NPN Transistor RF Power Output for Mobile Use, PO = 18W @ 866MHz
Description: The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device utilizes matched input technology (Tuned Q) to increase bandwidth and po |
NTE |
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