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NTE3161 PDF Datasheet

The NTE3161 is Led. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 NTE3161
LED

NTE3160, NTE3161, NTE3162 Light Emitting Diode − 1mm x 5mm Features: D Lead Frame Type w/Diffused Lens: NTE3160 (Red, GaP/GaP) NTE3161 (Green, GaP/GaP) NTE3162 (Yellow, GaAsP/GaP) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE Electronics
NTE Electronics
pdf

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2SK3161   Silicon N Channel MOS FET High Speed Power Switching

2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-734A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1

Hitachi Semiconductor
Hitachi Semiconductor
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2SK3161   Silicon N Channel MOS FET

2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1086-0300 (Previous: ADE-208-734A) Rev.3.00 Sep 07, 2005 R

Renesas
Renesas
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2SK3161L   Silicon N Channel MOS FET High Speed Power Switching

2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-734A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1

Hitachi Semiconductor
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