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NTE1714S データシート PDF

この部品の機能は「Integrated Circuit Remote Control Amplifier/detector」です。


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部品番号
NTE1714S

Integrated Circuit Remote Control Amplifier/Detector


NTE1714S Integrated Circuit Remote Control Amplifier/Detector Description: The NTE1714S is and integrated circuit in an 8–Lead SIP type package designed for use in infrared remote control applicatio


NTE
NTE

データシート pdf



文字列「 NTE1714 」「 1714S 」で始まる検索結果です。

部品説明

NTE1714M

Integrated Circuit Remote Control Amplifier/Detector

NTE1714M Integrated Circuit Remote Control Amplifier/Detector Description: The NTE1714M is and integrated circuit in an 8–Lead DIP type package designed for use in infrared remote control applications. It provides the high gain and pulse shaping needed to couple the signal from

NTE
NTE

 データシート pdf


2DB1714

PNP SURFACE MOUNT TRANSISTOR

NEW PRODUCT 2DB1714 LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Complementary NPN Type (2DD2

Diodes
Diodes

 データシート pdf


2N1714

Trans GP BJT NPN 3-Pin TO-5

New Jersey Semiconductor
New Jersey Semiconductor

 データシート pdf


2SA1714

PNP Silicon Power Transistor

DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse mortors or b

NEC
NEC

 データシート pdf


2SB1714

Bipolar transistor

2SB1714 Transistors -2A / -30V Bipolar transistor 2SB1714 zApplications Low frequency amplification, driver zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE( sat) ≤ -370mV, at IC

ROHM Semiconductor
ROHM Semiconductor

 データシート pdf


2SD1714

Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1714 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1159 APPLICATI

Inchange Semiconductor
Inchange Semiconductor

 データシート pdf

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